Hello MEMS,

I'm trying to use aluminum oxide as etching mask to etch titanium
underneath using RIE. The gases available are Cl2, CF4, CHF3, SF6, CBrF3,
CH4, He, H2, Ar, O2, and N2. The Al2O3 layer is ~400nm thick and has ~80nm
holes, and Ti layer is ~150nm.

I don't care if the Al2O3 will be all etched, but I do want to transfer the
pattern to Ti. Is that possible using RIE? What recipe should I use? I
imagine should be something with high RF power and low chamber pressure.
But since we only have Cl2 gas for chlorine based etching, does anyone know
what gases and flow rates should I use?

Any advice is greatly appreciated! Thank you so much!

Best regards,
--
Xiaoning Wang (Travis)
PhD Candidate
Mechanical Engineering
Boston University
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