Hi all,
 I am trying to etch a pattern on a device written on HSQ via E-beam. Currently,
I am using KOH+IPA solution at 78 C as the etchant and the pattern disappears in
few seconds.I am really confused why this occurs because I think HSQ interaction
with electron beam produces amorphous SiO2.

Please, have anybody done this. Thanks in advance for your responds

Tony
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