A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Good hard mask material for STS oxide dry etch
Good hard mask material for STS oxide dry etch
2015-09-17
Youmin Wang
Good hard mask material for STS oxide dry etch
Youmin Wang
2015-09-17
Hi ALL,

I wonder if anyone of you have used oxide dry etch tools from STS. Could
anyone give me a good suggestion on the hard mask you have tried?

Currently I am considering to etch 2.5um oxide with the feature size of
300nm, therefore the aspect ratio is as high as 1:8. I have tried a-Si but
the selectivity is also only 1:4 under this feature size. I am using C4F8
as the etching gas, with H2 for polymerization.

Any comment will be welcome. Thanks!!


Best,
Youmin
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Process Variations in Microsystems Manufacturing
University Wafer
Tanner EDA by Mentor Graphics
Addison Engineering