Hi!

Could anyone help me with the Boron diffusion problem described below?

I did boron diffusion with solid source BN-HT in 1100C, 8 hours. The original
wafer is (100) orientation without patterns. After removing the surface Si-B
layer, I found there are different areas on the wafer surface separated by some
lines with 45 or 90 degrees. Some of these areas have crack-like patterns,
while others haven't.

Thanks for your help.

Zheng