Dear MEMS colleague:
    I use spin-on boron liquid dopant on silicon wafer.and after about
20hrs furnace diffusion. I found that: in the center area of the wafer i get
lower resistivity than in the edge area of the wafer.
    what casue Resitivity difference: in the spin-on dopant or in diffusion
furnace? what is the reason of it.

Thanks.

JL

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