Dear Mr. Mori,


On Wed, 17 Feb 1999, Kiyotaka Mori wrote:
>Does anyone know wet etching for Si3N4 with mask of photoresist or PMMA
or Polyimide?

You can use Buffered HF (HF + NH4F + H2O). This etches Si3N4 ( Stoic )  at
about 700 A per minute. At IIT Bombay we have successfully used the above
recipe.  Photoresists like SHIPLEY 1400-31 (PMMA), Merk Selectilux,
Waycoat SC180, Shipley AZ1350 withstand BHF for about 1hr, hence you can
sucessfully use them as mask for patterning the nitride.

Let me know if there is any problem.
All the best

Regards
Amit

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Amit Shiwalkar                         Dept. Of Bio-Medical Engineering.
3,Vasant,                              IIT Bombay.
Carter Road,                           Powai, Bombay-400076
Khar,
Bombay(Mumbai)-400052
INDIA.


                     Email: [email protected]

" Reality Is a Figment of IMAGINATION "
                                ----------- Amit Shiwalkar

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