I am currently using a thin titanium layer (3 nm by e-gun evaporation)
to form a masking layer (pattern generated by lift-off) suitable
to RIE etch silicon on regions not covered by the titanium pattern.

Titanium is then removed in dilute HF. Titanium is never exposed
to a 'high temperature' because:
- Ti evaporation is on a 'cold' Si substrate
- RIE etching is performed at 15 deg C
- Ti removal by dilute HF is at room Temp.

TiN and TiSix are not likely to form due to the low Temperature ??

My question is: Is there any possible diffusion of Ti into Si or
                any contamination that would alter the electrical
                properties of Si after Ti removal ?
                I know for instance that Au or Cu are not
                appreciated for this reason !

Thanks

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     Emmanuel Dubois
     Institut d'Electronique et de
     Microelectronique du Nord
     Departement ISEN
     Avenue Poincare B.P.69
     59652 VILLENEUVE D'ASCQ  CEDEX
     tel: (+33) 3 20 19 79 16
     fax: (+33) 3 20 19 78 84
     e-mail:[email protected]
     http://www.isen.fr/isen-lci/quest

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