Hi,
   I am working on the electro-thermal micro devices, the device was doped
by phosphorus. Does anyone has the information data or experience the result
of thermal properties of doping silicon.(300k-1400k)

like the thermal expansion coefficient, melting point, thermal
conductivity.
for example,we found that it looks like the melting point several hundred
degree lower than undoped one (literature)

Best Wishes

J


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