Included are the responds to my following inquiry:
I need to form a porous silicon for my research. Could anyone suggest an
electrochemical cell that is suitable for this purpose and available
commercially? I would like to hear also from colleagues who built their own
cell and made it work...
Again, I will update you with the replies I get.
best regards,
levent
===============================================
Does the porous silicon need to be single crystal. Sputtered silicon is
porous to HF as deposited and exposure to HF may make it porous to other
chemicals as well.
Best, Ken
================================
Hi Levent,
We made our own cell. Its made of polypropylene and has an in-built window
(for illumination) made of perspex material. It works very well.
When you choose the material you have to be careful that it can withstand
ethanol which is one of the consituents of the solution.
Let me know if you have any further questions.
Best regards,
Andrew
===========================================
Dear Levent,
Have a look at the page:
http://www.ammt.de/html/ps_box.html
They also offer galvanostats for electrochemical etching.
We use this machine since 2 years, and we are very satisfied,
for work we did with it, see:
http://dmtwww.epfl.ch/ims/micsys/projects/porsi/
Best regards,
Gerhard
===========================================
Levent,
I never dealt with mesoporous silicon. What I however observed in nanoporous
(moderately doped p ) is that although light is not necessary for pore
growth, it does make the growth rate faster (several times).
You probably won't need illumination but it will fasten the growth rate.
I don't have experience with poly or metal on porous silicon.
Patent below might be helpful (about layer deposition on porous Si):
US5242863: Silicon diaphragm piezoresistive pressure
sensor and fabrication method of the same
Lehmann published a paper in Journal of Microsystems on capacitor made of
porous silicon (either 1999 or 2000). I think he deals there with metal
deposition on porous Si (I don't know exactly the reference).
Canon Corp. grow epi layers on top of nano porous silicon for BESOI
applications:
K. Sakaguchi et. al. "Extremely high selective etching of porous si for
single etch-stop bon-and-etch-back silicon-on-insulator".
Jpn. Journal of Applied Physics Vol. 34 (1995) pp. 842-847
Best regards,
Andrew
==============================================
Dear Levent,
thank you for your inquiry about our galvanostat for porous silicon
etching. The device, including software for MS Windows, costs 5550 Euro and
the
delivery time is at the moment three months as we have already a couple
of early orders that have to be served first.
The galvanostat is about to finish the last field test at a
collaborating research institute, so minor changes to the specs might
be possible.
If you have further questions, please do not hesitate to contact me
directly.
Best regards,
Jan Lichtenberg
--------------------------------
Dipl.-Ing. Jan Lichtenberg
AMMT Advanced Micromachining Tools GmbH
A.-Feuerbach-Str. 6
D-67227 Frankenthal
Deutschland/Germany
Tel.: +49-6233-4960014
Fax: +49-6233-436214
eMail: mailto:[email protected]
WWW: http://www.ammt.de
