Typical etch parameters I have used for deep Si etch are:

O2 - 5 sccm
SF6 - 5 sccm
CHF3 - 5 sccm
Pressure - 70 mT
RF Power - 300 watts

The wafer being etched was attached to a larger Si dummy wafer with Stronghold
wax, then attached the dummy wafer to the electrode with Fomblin vacuum grease
to control temperature.. The dummy wafer provides extra loading which seems to
improve both the uniformity and the anisotropy of the etch.

The etcher was a Semi Group 1000 (no turbo pump).  Optimum parameters will be
system dependant.

I used as a guide the "Black Silicon Method" described by Henri Jenson and
coworkers in the following papers :

J. Micromech. Microeng . 5 (1995), p 115-120
J. Electrochem. Soc . Vol. 142 , No. 6 (1995) p. 2020-2028



>>> "Murat GEL"  03/06/01 09:12AM >>>
Your etching speed is so fast please let me know your process conditions:

like
        SCCM for those three gas,
        Power
        Pressure

I have to wait 1 hr to etch 5 microns.!!!

Thankyou for your time and cooperation.
Murat



Roger Shile         :
>I guess that depends on what you consider deep.
>
>I have anisotropically etched silicon to a depth of 30 microns using SF6, O2,
and CHF3
in a conventional conventional RIE.  The etch rate was ~0.5 micron/min.  Near
vertical
sidewalls are achievable if the substrate is attached to the electrode with
vacuum
grease..
>
>With "DRIE" such as the Bosch process the etch rate is considerably higher, but
it will
cost you $.
>
>>>> "Chan (Chacrya) Tith"  02/21/01 10:24AM >>>
>Hi, I was wondering if someone could tell me the pros and cons of RIE vs
>DRIE.  I haven't found much information on either topics, so if anyone can
>help me out, it would really help.  thanks in advance.  please respond to
>[email protected]
>
>thanks
>
>_________________________________________________________________
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>
>

----
Murat GEL  [email protected]