HI:

We are looking for large band gap materials to be
ion beam sputterring deposited onto nanosized ZnS,
CdSe or SiO2 particles. Does anyone know which choice
is the best for each of the above materials? My
difficulty is:

1. My chamber is an UHV chamber. We do not like to use
high vapor pressure materials as targets, such as Zn
related compounds (to avoid contamination of the
chamber by Zn);

2. The lattcie constants of the films must match with
the nanoparticles.

Thank you very much.

Weijie

abstract200@yahoo.com




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