Hi, I am working in the Microelectronics Centre, IIT Kharagpur in a
project. We are trying to develope a Micromachined flowsensor for which
we need to etch silicon. We are using KOH solution to etch silicon with
a 1.0 micron thick silicon dioxide layer to protect the desired parts of
silicon.If anybody can please provide us the silicon etching rates in
KOH solution at different temperatures and concentration then it will be
very helpful for us. Thanks With regards Kanishka Biswas

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