Why not just use the low stress nitride instead ?  The resulting stress
is 0- 200 Mpa Tensile versus normal LpCVD nitride at 800+ Mpa Tensile.
While Thermal Si02 applies compressive stress at 200- 500 Mpa and you
are suggesting doing that twice.
While the idea you for offsetting is interesting, I would not think that
it would provide you with your desired results

One detractor of the Low Stress LPCVD Nitride is the cost at nearly
$3000 per 25 wafers on the service market versus $950 for 75 wafers
using standard Si3N4, but then I guess you gets what's you pay for.

while I am here a short plug- I have a lot of excess Soi wafers in 4" to
6" and also a lot of stock CZ and FZ SSP and DSP should anyone wish to
contact me  off-line.

Best Regards,
Ken Smith

Steven Gross wrote:
>
> Hello,
> Does anybody know who has experience with deposition of oxide/nitride/oxide
> for stress compensation? Thanx
> - Steve
> Steven J. Gross
>
> Graduate Researcher
> The Pennsylvania State University
> Department of Electrical Engineering
> 121 Electrical Engineering East
> University Park PA
> 16802
>
> Fax     (814) 865 2798
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>
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--
Ken Smith

Kmbh Associates

4968 Charter Road
Rocklin, CA  95765  USA
510-714-5055 Efax- 510 217 4421 or 561 658 6136

High Purity Float Zone and Specialty CZ Silicon  for Power, IR and
Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor
applications. Service in SOI, Polishing SSP and DSP.