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MEMSnet Home: MEMS-Talk: Measuring coefficient of thermal expansion (CTE) for Silicon
Measuring coefficient of thermal expansion (CTE) for Silicon
2001-09-12
Randall Cha
Measuring coefficient of thermal expansion (CTE) for Silicon
2001-09-13
Kenneth Smith
Measuring coefficient of thermal expansion (CTE) for Silicon
Kenneth Smith
2001-09-13
Dear Randall,

The CTE range is a function of temperature the 2.6E-06 is at 293 degree
K and the 4.1E-06 is at 1400 K.

You can contact me with any details of your specific needs in 2", 4" and
6" Silicon wafers.

Regards,
Ken

Randall Cha wrote:
>
> Dear colleagues,
>
> I will like some information regarding the thermal expansion of
> coefficient. I found some data which indicated Si has a CTE ranging from
> 2.6E-06 to 4.1E-06 W/mK.
>
> What causes this range of CTE variation? I suspected 2 causes:
>
> a) these CTE values were measured at different temperatures
> c) these CTE values are dopant dependent (???)
>
> Please kindly advise. In addition, if any vendors can supply me with
> silicon substrates (2", 4", 6") with CTE of 4.1, please kindly drop me
> another email.
>
> Rgds,
> Randall Cha
> DL Pte Ltd, Singapore
> Tel: 65-415 4447
> Fax: 65-415 4444
>
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--
Ken Smith

Kmbh Associates

4968 Charter Road
Rocklin, CA  95765  USA
510-714-5055 Efax- 510 217 4421 or 561 658 6136

High Purity Float Zone and Specialty CZ Silicon  for Power, IR and
Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor
applications. Service in SOI, Polishing SSP and DSP.


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