Dear all:

  Could you please share some isotropic wet silicon etching experience
with me? I want to know the volume ratio of the HF:HNO3:HAC ,the etching
rate and the mask. According to my reference, the etching rate of silicon
is too quick (7 um/min) with SiO2 mask. I wonder if there is another good
volume ratio to provide slower (less than 1um/min) silcion etching still
with SiO2 as the mask.

Thanks in advance,

Regards,

Li Gang

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