Dear MEMs Enthusists,
        Whilst using TMAH to remove polysilicon, we found that silicon
structures - on a piece of silicon - which have been wire bonded at certain
regions cannot be effectively removed. We think it is to do with some
electrolytic cell generation.

Consequently, we think that if we applied some sort of biasing  - using a Pt
electrode and the Si wfr (anode) - we think
that we may be able to force the 'stubborn' polysilicon to etch.

Has any one come across this phenomenon, or attempted this etch approach?

can anyone in cyberspace help?

rgds,

philip lau


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