hi:
you can try:
   (1) LPCVD Silicon Nitride (Si3N4)
   (2) PECVD Silicon Carbide (SiC)

I did succeful Si isotropic etching with (1) as mask

----- Original Message -----
From: "li gang" 
To: 
Sent: Monday, November 05, 2001 4:49 PM
Subject: [mems-talk] isotropic wet silicon etching.


> Dear all:
>
>   Could you please share some isotropic wet silicon etching experience
> with me? I want to know the volume ratio of the HF:HNO3:HAC ,the etching
> rate and the mask. According to my reference, the etching rate of silicon
> is too quick (7 um/min) with SiO2 mask. I wonder if there is another good
> volume ratio to provide slower (less than 1um/min) silcion etching still
> with SiO2 as the mask.
>
> Thanks in advance,
>
> Regards,
>
> Li Gang
>
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