I have tried using ACES to simulate KOH silicon etching of convex corners
(under Windows ME).  The results don't seem to agree very well with
experiment.

My understanding is that the etching of convex corners on a {100} Si wafer  is
dominated by the "fast etching {411} planes".  However ACES doesn't consider
{411} planes.  Therefore I would conclude that ACES is only suited for
simulating the etching of holes with no convex corners.

Can someone correct me on this?

>>> [email protected] 12/19/01 02:12AM >>>
Dear all-

I download ACES from C. Liu's MEMS website at the University of Illinois
in Urbana (http://mass.micro.uiuc.edu/), and found it freezes my Windows
2000 laptop a few seconds after completing its analysis.  The program
was designed to run on Windows 95/NT.  I have changed the shortcut
settings to run ACES in both Windows NT and Windows 95 compatibility
modes in W2K to no avail.

So I have two general questions:

(1) Has anyone been successful running this program in W2K,
        and if so, how?  If the source code is available, can
        it be recompiled for W2K?

(2) How true are the simulations?  One will note that the only
        crystal silicon planes with finite etch rates as defined
        in the simulator are the <100> and the <311>.

Thanks,
Raj
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