BOB
Can you give me details on the parameters by which you ash SU-8
(Power/gases/flows/processing pressures)?
Thanks for your help
Liz

> From: BobHendu@aol.com
> Reply-To: mems-talk@memsnet.org
> Date: Wed, 19 Dec 2001 16:05:10 EST
> To: mems-talk@memsnet.org
> Subject: Re: [mems-talk] Hard mask for 20 um deep SiO2 RIE etch?
>
> We have good results with oxide as a hard mask. Typical selectivities are
>> 60:1 using oxide. Better than that we have had great results using SU-8 from
> Microchem corp. Initial results show a 40:1 selectivity pr:silicon and SU-8
> formulations can range from 5-100 microns. It also seems to ash or strip
> reasonably well at around 3 microns/minute. Bob Henderson
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