We typically use a SiO2 mask for anisotropic etching, but would
like to develop a special purpose process that does not require
heating the wafer to high temperatures to form oxide or nitrides.
We etch with alkali hydroxides.  Is there any photoresist or
other low temperature material that will resist the hydroxide
etch?
best regards
mark

Mark W. Lund, PhD
Director             >> Soft X-ray Web page http://www.moxtek.com<<
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