LPCVD silicon nitride is commonly used as a mask for KOH etching silicon,
though SiO2 may suffice if its thick enough.  I find 30w% KOH to etch thermal
SiO2 at ~20 angstroms/min at 80 degC, while etching Si at ~1 micron/min.  CVD
films will probably etch faster.

I have heard that Chrome will hold up well to KOH.

>>> ryannn01@hotmail.com 01/18/02 06:58AM >>>
Hi All,

I'm going to do a deep 10 hour KOH etch of Silicon and am wondering what the
best mask is and how it should be applied.  What are the advantages and
disadvantages?  Residual stresses; Porosity; Temperature; Recomended
thickness; Deposition (LPCVD, PECVD); Thermal

SiO2?
SiN?
PSG?
etc...

Thank you

Ryan
ryannn01@hotmail.com



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