I can't help you much - i'm not a "dep' eng", but if it is PECVD SiO2 that
you are refering to - then you can try reducing  the percentage of  Low freq
(change duty cycle for dual freq system), making the film less compressive
and moving to the Tensile Regime.

Also you can try reducing the temperature of the platen.

Or you could try putting some Oxide on the back of the wafer to reduce the
'bowing effect' - i'm not sure if this suitable for your application.

I was having trouble in electrostatically clamping a 6micron oxide wafer,
because of 'bowing' or compression, prior to etching.

Regards,

Philip Lau

(R&D Etch Eng)

----- Original Message -----
From: "TEL Klaus Beschorner" 
To: 
Sent: Saturday, January 19, 2002 9:38 PM
Subject: [mems-talk] SiO2 Deposition


> >I am trying to deposit about 50 Microns of Sio2 on Si and want a very
>  > flat surface profile. Can some one suggest an appropriate method for
>it?
>
> Sounds like a case for flame hydrolysis deposition.
> Google will give you many suppliers.
>
> best regards,
> klaus
>
>
> (TEEL) Tokyo Electron Europe Limited
> PVD Process Support  (ex MRC)
> Klaus Beschorner    Tel +49-7033-45683
> Drosselweg 6    Fax +49-7033-45631
> 71120 Grafenau, Germany       Mobile +49-174 315 7754
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