Dear MEMS members,

It has been reported that 40nm Cr can be used as a mask to etch silicon in
KOH solution, capable of withstanding the KOH for at least 12h:

http://galaxy.micro.uiuc.edu/facilities/processes/etching/silicon_cr_in_koh.
html

I am curious if Cr can be used as a mask to etch silicon in TMAH solution.
Has somebody an experience with Cr as an etching mask in TMAH?

Thanks a lot,
Vladimir