It might be a good idea to four-point probe both sides of the silicon wafer
BEFORE depositing the copper. Probably ought to use a bulk wafer (no
junctions),  Then 4PP the back of the wafer to determiine if the sheet
conductivity of the copper is present.  I'll bet the native oxide will not
insulate the silicon.

-----Original Message-----
From:   Sinu Mathew [SMTP:sinumathew@yahoo.com]
Sent:   Tuesday, February 05, 2002 7:01 AM
To:     mems-talk@memsnet.org
Subject:        [mems-talk] Resistivity measurment.

Hai ,
    I am doing the resistivity measurements of  Cu
films
deposited on Si substrate with native oxide by van der

Pauw  method.While calculating  Rho I have some
concussion regarding the thickness...Whether I have to
use the  wafer + film  thickness or only the film
thickness. Please gave some reference regarding this..
     Thanks in advance
                                    Sinu Mathew
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