Hi MEMS-researcher,

does anybody know how the mechanical properties (Young's mod., mean
and gradient stress, tensile and ultimate strength, ...) of
CVDeposited SiO2 (at 300-350 deg C, up to 2 um thick) change after
annealing steps due to densification? Which temperatures and dwell
times would you recommend for such an annealing? Do "lower" annealing
temperatures (400-600 deg C) make sense at all? Do you know some
references about it?

Please talk about your experiences! A poor PhD-student, still
completely lost in the cleanroom, will appreciate your responses !!

Joachim.
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Joachim Oberhammer, Dipl.-Ing.

Royal Institute of Technology (KTH)   Phone:    +46/(0)8 790 6250
Dep. of Signals, Sensors and Systems  Fax:      +46/(0)8 10 0858
Microsystem Technology (MST)          Mobile:   +46/(0)70 692 1858
                                       e-mail:   joachim.oberhammer@s3.kth.se
Osquldas vdg 10                       homepage: http://www.s3.kth.se/mst/
SE-100 44 Stockholm, Sweden