Greetings -

I am looking for a technique/recipe for forming sloped (roughly 45
degrees) edge profiles in etched polysilicon. The polysilicon is 2
microns thick, deposited by LPCVD over thermal oxide.

  My goal is to have a sputtered moly wiring layer cross the edge
continuously.  I have tried various SF6/O2 ratios in a reactive ion
etch system and CF4/O2 in a plasma etcher, but even the best edge
profiles have a very steep bit at the top of the slope.

Thanks for any suggestions you may have,

Jim
--

- Jim Beall

    beall@boulder.nist.gov
    Voice 303-497-5989
    Fax     303-497-3042
    National Institute of Standards and Technology
    Electromagnetic Technology Division
    325 Broadway, MC 814.03
    Boulder, CO 80305