Dear MEMS collegues
I'm working with a STS deep Si ICP etching machine. Until now the
machine was exclusively used for B and Ph doped
Si etching. We use processes for wafer through-etch (~500 micron) and
best sidewall etch.
No I have a request to etch SiGe (50 %). Does anybody has an idea about
contamination of the chamber and
possible influence on the Si-etching? How big is the risk that the
Si-etching will be different afterwards?
I appreciate any information that you can share with me.

Thanks
Stefan Blunier


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Dr. Stefan Blunier      Dr. Stefan Blunier
ETH Zentrum, CLA G 21.2 Federal Institute of Technology
Institut fuer Mechanische Systeme       Institute of Mechanical Systems
Tannenstrasse 3 Tannenstrasse 3
CH - 8092 Z|rich        CH - 8092 Zuerich
        Switzerland

Tel:   +41 1 632 77 64
Fax:  +41 1 632 11 45
e-mail: blunier@imes.mavt.ethz.ch
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