Hello everybody !

does anyone know the etch rate of amorphous silicon (deposited by CVD) in
Nitrogen plasma (using a PECVD-equipment; no self bias, 700 W @ 2,45 GHz) at
7500C? Does the plasma generate a silicon nitride layer on the surface of the
silicon and if so, how is the conversion rate ? Is there a thickness limit I
can reach ?

Joachim Kusterer
GFD mbH
Ulm, Germany