From my experience I think these parameters depend upon your deposition
system, system maintenance (cleanliness, contaminant levels in vacuuo, base
pressure, etc.) and and process parameters.  Even if you give me the make
and model number of your unit, I suspect any process I were to give you
might still yield different stress results.
I suggest you experimentally derive what your current stress levels are and
then post them.  One of us could help you modify the process to dial the
stress up or down from this point.

Rick

-----Original Message-----
From: [email protected] [mailto:[email protected]]On
Behalf Of Javeed Shaikh Mohammed
Sent: Friday, March 22, 2002 10:32 AM
To: [email protected]
Subject: [mems-talk] low stress ( tensile) "LPCVD silicon-nitride"


Hello everyone,

In my fabrication process, I will need to deposit a "LPCVD silicon-nitride"
layer with a tensile stress of ~ 100 MPa. Does any one have the "Process
parameters" for this process.

regards,
javeed shaikh mohammed.






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