Javeed -

Our process is:

6" LPCVD tube furnace
835 deg. C
100 SCCM dichlorosilane
17 SCCM ammonia
250 mT
~ 250 nm in 45 min.
Yields very low stress SiNx, index ~ 2.3

Let me know if you need more information.

Jim

>
>In my fabrication process, I will need to deposit a "LPCVD silicon-nitride"
>layer with a tensile stress of ~ 100 MPa. Does any one have the "Process
>parameters" for this process.

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  - Jim Beall 303-497-5989
    [email protected]