I met similar problem before. What I did is make the pumping time longer
before starting plasm, to make sure
the chamber clean enough. Then, let the O2 in and stay at a pretty high
pressure for several minutes. Then go down
to the O2 pressure level you need to start the plasma to do the ashing. The
machine I use is a very old PLASMOD. But
this method I use does work very well to me. I hope It works to you also.
good luck.

Qingwei

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-----Original Message-----
From: [email protected] [mailto:[email protected]]On
Behalf Of Mighty Platypus
Sent: Tuesday, March 26, 2002 10:09 AM
To: '[email protected]'
Subject: Re: [mems-talk] Plasma ashing


Well, with wet processing, you can use ALEG-355 from Mallincrodt Baker. It
works quite well. Dry, I would try RIE O2 plasma, but it seems like that
would do something to the chrome.

Jesse Fowler
  UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV
  Los Angeles, CA 90095-1597 | (310)825-3977
"Battery is safe if not provoked." -- _Batteries in a Portable World_

On Tue, 26 Mar 2002, Mike Tippetts wrote:

> I am currently trying to commision a TePla 300 Plasma processor for the
use
> in removing photoresist from devices after RIE but I am left with small
> residues which are impossible to remove. What are the best resist removal
> conditions and how can the temperature be kept as low as possible? Also is
> there any way to strip resist from chrome without removing the chrome as
> well.
>
> Mike Tippetts
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