I have a 300A Cr/2500A Au delamination problem. Cr/Au

was deposited on p-type Si <100> wafer. Then it was
put

into concentrated HF and Cr/Au layer were peeled off

after 30 minutes. The pre-clean (RCA clean and a 2min

Ar plasma pre-etch) was well done before sputtering.

My question is, what's the possible reason of the

delamination? Any suggestion? Thanks!

Jiang
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