hello jiang,
if anytime during your processing, the metallization
sees a temperature of 350C or above you might have
adhesion problems, coz Cr readily diffuses into Au
(thin films) at those temperatures.
Regards,
Adnan

--- Jiang Zhe  wrote:
> I have a 300A Cr/2500A Au delamination problem.
> Cr/Au
>
> was deposited on p-type Si <100> wafer. Then it was
> put
>
> into concentrated HF and Cr/Au layer were peeled off
>
> after 30 minutes. The pre-clean (RCA clean and a
> 2min
>
> Ar plasma pre-etch) was well done before sputtering.
>
> My question is, what's the possible reason of the
>
> delamination? Any suggestion? Thanks!
>
> Jiang
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