Hi,

I think it's not a probem to etch up to 500um for the
15um hole. But I suepect the 5um hole will not. I used
a STS ICP etcher and etched small holes (20um in
diameter) and it's not hard to etch 250um with good
verticality. The etching rate is ~2um/min. So I would
assume there should have no problem to etch further
(perhaps a little harder as etching goes deeper, the
vetial wall may taper in). Make sure you use good mask
materials like SiNx or AlOx. But if you etch the 3
holes in one wafer, the etching lag will be huge. Good
luck.

Jiang

--- Xing Yang  wrote:
> I am trying to find out for a colleague of mine how
> deep one can etch
> small holes (5um, 10 um, and 15 um) in DRIE. The
> holes will be far away from
> each other (1 mm pitch), and there are no other
> openings on the wafer. Any
> info will be highly appreciated.
>
> Xing Yang
> _______________________________________________
> [email protected] mailing list: to unsubscribe
> or change your list
> options, visit
>
http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS
> processing services.
> Visit us at http://www.mems-exchange.org/
Yahoo! Tax Center - online filing with TurboTax
http://taxes.yahoo.com/