Hi, Lijie Li,

Thanks for your answer.

Since I will use 50um or 100um thick top Si SOI wafer, I may need thick
photoresist as the mask. The main limitation will come from lithography
which is about 7um for 100um Si.

Am I right?

Liu Jing

----- Original Message -----
From: "Li Lijie" 
To: 
Sent: Wednesday, April 17, 2002 4:23 AM
Subject: Re: [mems-talk] design rule for DRIE comb drive?


> Hi, jingliu:
> If you are designing test mask, you can design a series of comb finger
> widths and a series of gap widths, for example from 2um to 10um. Because
the
> design rule depends on the parameters of DRIE equipment and properties of
> SOI materials. So I think it does not have general design rules for
> individual DRIE equipment.
>
> Lijie Li
>
> >From: "jingliu" 
> >Reply-To: [email protected]
> >To: 
> >Subject: [mems-talk] design rule for DRIE comb drive?
> >Date: Tue, 16 Apr 2002 10:40:18 -0400
> >
> >Dear College,
> >
> >I'm designing the test mask for our new DRIE tool. I want to know the
> >design
> >rule of comb drive?
> >
> >For SOI wafer with 100um (50um) top Si. Can I use 7um (4um) for width of
> >comb finger? Can I get even smaller tolerance for gap between comb
fingers,
> >say, 2um?
> >
> >Please give me your comment as soon as possible,
> >
> >Thanks in advance,
> >
> >MEMS Lab.
> >Mechanical Engineering Dept.
> >Univ. of Maryland
> >College Park
> >MD 20742
> >------------------
> >Tel: 301-405-2981
> >        301-403-8389
> >Fax: 301-403-2976
> >Email: [email protected]
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