Hi,
I would like to know if it is posible to make a good contact of
aluminium and a P doped wafer. The doping level is about  3.10+15 cm-3.
Maybe a suitable aluminium anealing would work?
Thanks in advance,
Sandra

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Sandra Bermejo Broto
Assistant Professor
Electronic Engineering Department
Semiconductor Devices Group (GDS)
UPC-Campus Nord, C5
C/Jordi Girona, 1-3
E-08034 Barcelona
SPAIN
Phone: + 34 93 401 68 78
Fax:   + 34 93 401 67 56
e-mail: sandra@eel.upc.es
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