Hi
The amount of doping and the proper annealing are a key to make good
contact. The if the doping of the P-type is less then there is all the
chance that you may end up with getting a schottkey contact rather than
ohmic(since Al also acts as a p type impurity in silicon so there will be
some diode formation). Your doping of around 3e15/cc may not be sufficient
as it will be better to have more than 1e18/cc to have good contact.
Also the annealing will not activate the impurity in their proper place in
silicon lattice, so you may not be able to achieve good contact if proper
annealing is not performed. what is the annealing done by you?
Regds
Ravi Shankar
Semiconductor Complex Ltd
India


On Mon, 22 Apr 2002, Sandra Bermejo wrote:

> Hi,
> I would like to know if it is posible to make a good contact of
> aluminium and a P doped wafer. The doping level is about  3.10+15 cm-3.
> Maybe a suitable aluminium anealing would work?
> Thanks in advance,
> Sandra
>
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