>
> I am interested in bonding silicon wafers to quartz wafers.  It seems
> that this would be similar to bond-and-etch-back-Silicon-on-Insulator
> techniques.  Does anyone have information on what anneal tempoeratures
> are commonly used in BESOI techniques?  It seems to me that temperatures
> of the order of 1000 degrees C may cause the silicon wafer to fracture
> on cooling.
>
> Best Regards
> Jarlath McEntee
>
>
>

Jarlath,
We performed electrostatic and fusion bonding of 10 mil Si (100) to amorphous
quarz 30 mils. The electrostatic bonding worked but the thermal mismatch
caused the Si to cleave along the {111} planes and with it the quarz after
cooling down to room temperature from about 450 deg C.