iain,
We have a patented process for end point of organic strip where instead
of using a CO or CO2 spectrophotometer we have a algorithm that monitors
pressure changes as strip starts and finishes and allows for end point
detection just using pressure variations. We could test this for you if you
can release samples. What sort of plasma system are you using and how
accurate is the pressure sensor. If the via etch ends when you reach a non
etch able area and the amount of side wall that is exposed is small compared
to the area of the etched via you may have a chance. If we do samples and
there is a chance of pressure variations working we could think about a
modification to your system. Bill Moffat.
-----Original Message-----
From: iain.watson@baesystems.com [mailto:iain.watson@baesystems.com]
Sent: Wednesday, May 01, 2002 12:35 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Etching of Vias
Dear All,
I have a problem trying to find a way of detecting the end point of a via
etch which has a 1um layer of Cr on top of a 2um layer of SiO2 to be
etched. We are currently relying on a visual inspection to determine the
end point. Rather than just rely on visual inspection does anyone know of
any other methods that might make this process more robust without
installing a end point detector on our etcher?.
hope you can give me some ideas,
many thanks,
Iain Watson.
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