Dear Fellow,

    I'm working in failure analysis of  Si components
I need to reveal a junction with a RIE process
I have Cl2,BCl3 ,CHF3 ,SF6 ,C2F6 ,N2  Ar ,O2
do you know something or a process which could etch faster  doped (or
undoped) regions  (pressure,% of gas,RF power)?
thanks


        Arnaud Margolli
        DGA - Celar
        division DIRAC-TECN
        failure analysis -ECE Dep
        + 33  (0)  2 99  42 66 06