If you are referring to the point in the anisotropy vs. substrate temperature
curve for plasma etching of Silicon using SF6 and O2 (no Chlorine), then there
is a pronounced bend at -40C(/F).  Most cryogenic etchers however try to
maintain something much lower (~-100C).
-Neal Ricks

  Jia Zhou  wrote: Who knows the temperature in DRIE when
silicon is deep-etched, say 500microns?

Thanks.
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