The secret in this case is definitely vacuum vapor prime.  An etch I used to
do on 17,000 Angstroms of thermal Silicon Dioxide using a spray HMDS as the
adhesion promoter seemed dependent on any factor that could affect it.  Tests
done on vacuum primed wafers that had been sitting in the open for 7 days
showed no problems.  Contact me for more details.  Bill Moffat

-----Original Message-----
From: Jing Liu [mailto:[email protected]]
Sent: Thursday, May 30, 2002 12:34 PM
To: [email protected]
Subject: [mems-talk] HF and photoresist mask


To who may concern,

I want to mask HF etching with photoresist. Just now, somebody suggest me
that
for the same thickness of oxide I will etch. The photoresist could stand
buffered HF, but for concentrated HF, it will not. Is it exactly the case?
Could I be able to find some reference?

BTW, we have Shipley 1813, AZ 5214, Az 9245 in the lab. Does anyone have some
date of how fast they will etched in HF?

Thanks,

Jing
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