Hi Jing,

I had exprimented with PR (SJR 5740 from Shipley) in both concentrated HF
and BOE. In 49% HF bubbles form from underneath the resist and peel the
resist off. I do not know how the 49% HF penetrate the PR, but some
reaction does take place between the PR and oxide interface. In BOE,
however, the PR held up rather well. Of course it is dependent upon your
process condition of the PR. If you hardbake the PR for longer, it is
usually more resistant to HF.

Good luck!

Henry

--------------------------------------------------------------
Henry Yang
Mechanics and Micromechanics Group
IBM Almaden Research Center
408-927-2319



                      Jing Liu
                                          cc:
                      Sent by:                 Subject:  [mems-talk] HF and
photoresist mask
                      mems-talk-admin@m
                      emsnet.org


                      05/30/2002 12:34
                      PM
                      Please respond to
                      mems-talk





To who may concern,

I want to mask HF etching with photoresist. Just now, somebody suggest me
that
for the same thickness of oxide I will etch. The photoresist could stand
buffered HF, but for concentrated HF, it will not. Is it exactly the case?
Could I be able to find some reference?

BTW, we have Shipley 1813, AZ 5214, Az 9245 in the lab. Does anyone have
some
date of how fast they will etched in HF?

Thanks,

Jing
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