My experience in etching SiO2 with unbuffered HF was pinholes in the SiO2
regions under photoresist (the HF seemed to go through the photoresist).

Photoresist does, however, provide an effective mask when etching with
Buffered Oxide Etch (HF + NH4F).

Roger Shile

>>> [email protected] 05/30/02 12:34PM >>>
To who may concern,

I want to mask HF etching with photoresist. Just now, somebody suggest me
that
for the same thickness of oxide I will etch. The photoresist could stand
buffered HF, but for concentrated HF, it will not. Is it exactly the case?
Could I be able to find some reference?

BTW, we have Shipley 1813, AZ 5214, Az 9245 in the lab. Does anyone have some
date of how fast they will etched in HF?

Thanks,

Jing
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