HF will eat Ti quickly, expecially with concentrated HF. I've used 1:1000
HF and etched a layer 100 Ang evaporated Ti in 5 minutes. I do not
understand the use of Ti under Cr.
Cr is also attacked by concentrated HF (E-beam evaporated Cr, 200 Ang,
deposited using UCLA CHA E-beam) at a rate of ~ 1um/min. It might be better
in BOE. Using only Cr as adhesion layer might be worth your time.
Henry
--------------------------------------------------------------
Henry Yang
Mechanics and Micromechanics Group
IBM Almaden Research Center
408-927-2319
Jian Li
To: [email protected]
Sent by: cc:
mems-talk-admin@m Subject: [mems-talk] Re: HF and
photoresist mask
emsnet.org
05/31/2002 10:08
AM
Please respond to
mems-talk
Since PR ususally peels off in HF, is it possible that
you use metal layer as adhesion promoter or polySi
film as mask?
I ever HF etched pyrex using Ti+Cr+P.R as mask and it
had hold for more than 20 minutes before pin-holes
appeared.
This might be helpful:
Thierry Corman, J. Micromech. Microeng, 1998 8 84-87
jian
-----Original Message-----
From: Jing Liu [mailto:[email protected]]
Sent: Thursday, May 30, 2002 12:34 PM
To: [email protected]
Subject: [mems-talk] HF and photoresist mask
To who may concern,
I want to mask HF etching with photoresist. Just now,
somebody suggest me
that
for the same thickness of oxide I will etch. The
photoresist could stand
buffered HF, but for concentrated HF, it will not. Is
it exactly the case?
Could I be able to find some reference?
BTW, we have Shipley 1813, AZ 5214, Az 9245 in the
lab. Does anyone have some
date of how fast they will etched in HF?
Thanks,
Jing
Yahoo! - Official partner of 2002 FIFA World Cup
http://fifaworldcup.yahoo.com
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