Hi everybody

I have to lift off 200 nm thick SiO2 films deposited on various metalic
films. During the deposition of these films by sputtering, the substrate is
heated at temperatures around 100 0C and the lift off is quite difficult
without using a chlorobenzene treatment of the resist (the resist used is
S1813).
Concerning that point, is there somewhere (book or article) a good review
gathering the information about these treatments and the influence of the
different parameters?
It also exists commercial products to help the lift-off process (LOL by
Shipley or LOR by MCC). What are the advantages of these products compared
to the chlorobenzene solution?
Is it possible to strip theses products without using remover but just
aceton?
A 1500C bake seems necessary, is it possible to reduce this temperature?

Thanks in advance for your help...

Francois Montaigne (LPM, University of Nancy, France)