Dear All:

In my SiO2 etching experience with ECR model ,when I used metal Cr film as the
etching mask, the etched surface is very rough even though the self bias is
small ,when the self bias -40V approximately,the roughness nearly 500A.however
when I used metal Al film as the etching mask and through the same process, the
etch result is smooth.as in my experience,the Cr film is must be used,so I am
urgently.want to know the reason of the roughness and how to get smooth surface
with Cr mask.  Coulf you give me some information,thank you very much ahead!

Lib zhou
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