Clif,

That is a good point. One more thing I want to add is that the way of
drying and the dry time will also affect the result of CA. The dry
time I used is 0.5hr.

Xiaodong


--- CLIF HAMEL  wrote:
> Mike,
> Silicon may have a range of contact angles from near 5 degrees to
> 90 degrees
> depending upon what has been done to it.  In the case of your RCA
> clean,
> surely 5-10 is typical.  In addition, if the surface has seen any
> other
> chemical processing the angle may be changed.
>
> Native oxide:         20-30 degrees
> Sulfuric/Nitric Aced: 5-10 degrees
> HMDS Type Process A:  65-75 degrees
> HMDS Type Process B:  75 or more
> and so on.
>
> Therefore, Changhong should indicate the exact conditions for his
> silicon
> surface that he is interested in.
>
> Clif
>
> Clifford J. Hamel
> Suss Microtec Applications Engineer
> (802) 244-5181, ext 297
>
> >>> [email protected] 07/17/02 11:24AM >>>
> Contact angle will depend on the surface chemistry of the silicon.
> That
> is what types and how many fucntional groups are attached to the
> surface. For example, I can bring the contact angle to very low
> values
> by using a base clean (RCA Clean).
>
> -Mike
>
> >>> [email protected] 07/17/02 07:32AM >>>
> I recently tested the CA of water on Si using OCA system. The
> results
> are in the range of 70 - 75.
>
> Xiaodong
>
>
> --- changhong ke  wrote:
> > Dear Members:
> >
> > Currently I want to know the contact angle of water on Si
> substrate
> > and Cr
> > substrate. However, I couldn't find it in  handbooks.
> > If you happen to know the information, please drop me an emai,
> your
> > help is
> > greatly appreciated.
> >
> > changhong
> > --------------------------------------
> > Changhong Ke
> > Mechanical Engineering
> > Northwestern University
> > 2145 Sheridan Road
> > Evanston,IL 60208-3111 USA
> > Lab Phone:(847)467-7673
> > Fax:(847)491-3540
> > E_mail:[email protected]
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>
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