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MEMSnet Home: MEMS-Talk: TiO2 on Nitride
TiO2 on Nitride
2002-08-16
Haigh, Richard
TiO2 on Nitride
Haigh, Richard
2002-08-16
Dear colleagues

I've prepared films of Pt (200 nm)/TiO2 (80 nm)/Si3N4 (200 nm)/Si where
Ti was sputtered oxidised (RTA at 550 C / Air / 30 min) before Pt was
sputtered. The Pt will peel from the TiO2 at room temperature, unless
the Pt / TiO2 is been annealed under air at 710 C / 30 min. Suggesting
that the Pt sputtered film is under high stress.  I am not too sure if
this is a processing problem (contamination of some description) or
something more fundamental (e.g. poor wetting of the Pt on the TiO2).

Is there any contact angle data for Pt on a variety of surfaces such as
Ti, TiO2, and Si etc? Has anybody experienced similar problems?



Regards


Richard Haigh

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