Hi~

I'm trying to make poly-Si deep trench with LAM9400 or AMAT MxP poly etcher.
Mininum feature size is 3um and depth is 20um.
And vertical profile is needed; over 89¢ª
And hard mask for poly etch is PETEOS oxide of 1.5um.
Oxide etch will be done with TEL IEM oxide etcher.
I'll start with Cl2+O2 gas chemistry for poly etch.

If there is anybody who have done similar experience,
please give me comment.

Best Regard,
Sunghon Chi